to-220 -3l plastic-encapsulate transistors TIP110 darlington transistor (npn) features z high dc current gain : h fe =1000 @ v ce =4v, i c =1a(min.) z low collector-emitter saturation voltage z industrial use maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =10ma,i e =0 60 v collector-emitter sustaining voltage v ceo (sus) i c =30ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =10ma,i c =0 5 v collector cut-off current i ceo v ce =30v,i b =0 2 ma collector cut-off current i cbo v cb =60v,i e =0 1 ma emitter cut-off current i ebo v eb =5v,i c =0 2 ma h fe(1) v ce =4v,i c =1a 1000 dc current gain h fe(2) v ce =4v,i c =2a 500 collector-emitter saturation voltage v ce(sat) i c =2a,i b =8ma 2.5 v base-emitter voltage v be v ce =4v,i c =2a 2.8 v collector output capacitance c ob v cb =10v,i e =0,f=0.1mhz 100 pf to-220 -3l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|